US 12,293,855 B2
Transparent conductive film, method of manufacturing same, thin film transistor, and device including same
Younhee Lim, Suwon-si (KR); Sangyeon Pak, Suwon-si (KR); Jiwon Son, Suwon-si (KR); Yong Wan Jin, Suwon-si (KR); SeungNam Cha, Suwon-si (KR); Kyungbae Park, Suwon-si (KR); and Chuljoon Heo, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Research & Business Foundation Sungkyunkwan University, Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Aug. 29, 2022, as Appl. No. 17/898,416.
Claims priority of application No. 10-2021-0115156 (KR), filed on Aug. 30, 2021.
Prior Publication US 2023/0079198 A1, Mar. 16, 2023
Int. Cl. H01B 1/06 (2006.01); C23C 22/82 (2006.01); H01B 1/10 (2006.01); H01L 29/45 (2006.01); H10K 10/84 (2023.01); H10K 30/82 (2023.01); H10K 50/828 (2023.01); H10K 39/32 (2023.01); H10K 65/00 (2023.01)
CPC H01B 1/06 (2013.01) [C23C 22/82 (2013.01); H01B 1/10 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H10K 10/84 (2023.02); H10K 30/82 (2023.02); H10K 50/828 (2023.02); H10K 39/32 (2023.02); H10K 65/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A transparent conductive film, comprising
a metal chalcogenide compound doped with a halogen,
wherein the transparent conductive film has a sheet resistance of less than or equal to about 60 ohm/sq. at a temperature of about 20° C. to about 25° C.