| CPC G11C 16/3495 (2013.01) [G11C 16/102 (2013.01); G11C 16/16 (2013.01); G11C 16/32 (2013.01)] | 16 Claims |
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1. A memory device, comprising:
a memory array including multiple dies each having rewritable memory cells configured to store data; and
a memory controller operably coupled to the memory array and configured to:
group memory blocks in different dies into a block stripe (BS) configured to store a set of related data, wherein different portions of the set of related data are stored across the different dies to leverage independent access circuits within the different dies and decrease an overall access time for the set of related data;
access the BS or a targeted memory block therein using a host write cursor and/or a garbage collection (GC) cursor;
track a detection list that identifies dies, blocks, block stripes, or a combination thereof targeted for the reliability measurement;
determine a reliability measure for a die in the memory array based on implementing a set of memory operations involving the die according to a predetermined schedule, wherein the reliability measure represents a capability of the die or a set of memory cells therein to store and maintain accurate levels of charges over time to accurately retain the stored data, wherein the reliability measure is determined based on:
using the host write cursor and/or the GC cursor according to the detection list in determining the reliability measure;
transitioning a selected BS that is in a garbage queue and/or a free queue into a target state when a set of blocks in the selected BS correspond to one or more block identifiers specified in the detection list;
iteratively implementing a following set of operations across in the set of blocks to determine the reliability measure corresponding to each block:
erasing a target memory block within the die;
initiating a programming operation at the target memory block with predetermined data within a programming start time from the erase operation;
completing the programming operation within a programming completion time;
reading the target memory block within a test read time from completing the programming operation;
returning the selected BS to an original state after implementing the read operation; and
computing the reliability measure according to a difference between the predetermined programming data and a result of the read operation;
identify a bin categorization for the die based on the determined reliability measure; and
adjust operation of the die according to the bin categorization.
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