US 12,293,793 B2
Non-volatile memory device, memory system including the same and read method of memory system
Sung Hun Kim, Gyeonggi-do (KR); and Hyo Jae Lee, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on May 17, 2024, as Appl. No. 18/666,819.
Application 18/666,819 is a continuation of application No. 17/559,243, filed on Dec. 22, 2021, granted, now 12,020,755.
Claims priority of application No. 10-2021-0082501 (KR), filed on Jun. 24, 2021.
Prior Publication US 2024/0304260 A1, Sep. 12, 2024
Int. Cl. G11C 16/26 (2006.01); G11C 5/14 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 5/147 (2013.01); G11C 16/08 (2013.01); G11C 16/3431 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a plurality of memory cells;
a first storage storing a first adjustment table for adjusting a read voltage using a first offset level, the first adjustment table shared by both a first read operation and a second read operation; and
a second storage storing a second adjustment table for adjusting the read voltage using a second offset level, the second adjustment table being dedicated to the second read operation,
wherein, when a read retry operation is performed on the plurality of memory cells, the read voltage for the read retry operation is adjusted differently depending on whether the read retry operation is the first read operation or the second read operation.