US 12,293,792 B2
Voltage prediction method, memory storage device and memory control circuit unit
Po-Cheng Su, Hsinchu (TW); Po-Hao Chen, Hsinchu County (TW); Yu-Cheng Hsu, Yilan County (TW); and Wei Lin, Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Apr. 10, 2023, as Appl. No. 18/298,335.
Claims priority of application No. 112108586 (TW), filed on Mar. 8, 2023.
Prior Publication US 2024/0304259 A1, Sep. 12, 2024
Int. Cl. G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 16/08 (2013.01); G11C 16/3404 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A voltage prediction method for a rewritable non-volatile memory module, the voltage prediction method comprising:
reading a plurality of memory cells in the rewritable non-volatile memory module by using a first read voltage level to obtain count information, wherein the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the plurality of memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the plurality of memory cells; and
predicting a second read voltage level according to the count information without reading the plurality of memory cells by using a second read voltage level to be corrected, wherein the second read voltage level and the second read voltage level to be corrected are both configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.