US 12,293,786 B2
Method for reading memory, a memory, a memory system, and electronic device
Zhuqin Duan, Wuhan (CN); and Xiaojiang Guo, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 27, 2022, as Appl. No. 18/089,512.
Claims priority of application No. 202211585949.3 (CN), filed on Dec. 9, 2022.
Prior Publication US 2024/0194248 A1, Jun. 13, 2024
Int. Cl. G11C 11/408 (2006.01); G11C 11/4096 (2006.01)
CPC G11C 11/4096 (2013.01) [G11C 11/4085 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for reading memory, comprising:
applying at least one first read voltage to a word line corresponding to a first word line address in a first read request instruction;
detecting an obtained second read request instruction; and
in response to a second word line address included in the second read request instruction being the same as the first word line address, applying at least one second read voltage to the word line corresponding to the first word line address after an end of application of the at least one first read voltage.