US 12,293,784 B2
Voltage calibration method, memory storage device and memory control circuit unit
Po-Hao Chen, Hsinchu County (TW); Po-Cheng Su, Hsinchu (TW); Shih-Jia Zeng, Hsinchu (TW); Yu-Cheng Hsu, Yilan County (TW); and Wei Lin, Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Apr. 17, 2023, as Appl. No. 18/301,275.
Claims priority of application No. 112108178 (TW), filed on Mar. 7, 2023.
Prior Publication US 2024/0304235 A1, Sep. 12, 2024
Int. Cl. G11C 7/00 (2006.01); G06F 3/06 (2006.01); G11C 11/409 (2006.01); G11C 16/26 (2006.01)
CPC G11C 11/409 (2013.01) [G06F 3/0679 (2013.01); G11C 16/26 (2013.01)] 33 Claims
OG exemplary drawing
 
1. A voltage calibration method, configured for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the voltage calibration method comprises:
reading first data from a first physical unit in the plurality of physical units using a first read voltage level and reading second data from at least one second physical unit in the plurality of physical units using a second read voltage level;
obtaining count information according to the first data and the second data, wherein the count information reflects a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit; and
calibrating the first read voltage level according to the count information.