CPC G11C 11/409 (2013.01) [G06F 3/0679 (2013.01); G11C 16/26 (2013.01)] | 33 Claims |
1. A voltage calibration method, configured for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the voltage calibration method comprises:
reading first data from a first physical unit in the plurality of physical units using a first read voltage level and reading second data from at least one second physical unit in the plurality of physical units using a second read voltage level;
obtaining count information according to the first data and the second data, wherein the count information reflects a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit; and
calibrating the first read voltage level according to the count information.
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