US 12,293,781 B2
Three-state spintronic device, memory cell, memory array and read-write circuit
Huai Lin, Beijing (CN); Guozhong Xing, Beijing (CN); Zuheng Wu, Beijing (CN); Long Liu, Beijing (CN); Di Wang, Beijing (CN); Cheng Lu, Beijing (CN); Peiwen Zhang, Beijing (CN); Changqing Xie, Beijing (CN); Ling Li, Beijing (CN); and Ming Liu, Beijing (CN)
Assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Appl. No. 18/261,716
Filed by INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
PCT Filed Jan. 21, 2021, PCT No. PCT/CN2021/072992
§ 371(c)(1), (2) Date Jul. 17, 2023,
PCT Pub. No. WO2022/155828, PCT Pub. Date Jul. 28, 2022.
Prior Publication US 2024/0071451 A1, Feb. 29, 2024
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1673 (2013.01) [G11C 11/1655 (2013.01); G11C 11/1657 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A three-state spintronic device, comprising: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top;
wherein the magnetic tunnel junction comprises: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer and a ferromagnetic reference layer from bottom to top; and the magnetic tunnel junction further comprises:
three local magnetic domain wall pinning centers embedded in the spin-orbit coupling layer, wherein the three local magnetic domain wall pinning centers are respectively in contact with the ferromagnetic free layer, and a first pinning region, a second pinning region and a third pinning region are formed in the ferromagnetic free layer; and
magnetic domain wall nucleation centers at two ends of the ferromagnetic free layer, wherein the magnetic domain wall nucleation centers have an anisotropy constant of 7×105 J/m3 to 9×105 J/m3; and a first nucleation region and a second nucleation region are formed in the ferromagnetic free layer; and
wherein a current pulse is injected into the spin-orbit coupling layer, and a spin current is generated to drive a magnetic domain wall in the ferromagnetic free layer to move, so that a resistance state switching is performed.