US 12,293,714 B2
Display device
Hee Rim Song, Yongin-si (KR); Hee Jean Park, Yongin-si (KR); Yu Jin Lee, Yongin-si (KR); Cheol Gon Lee, Yongin-si (KR); and Mu Kyung Jeon, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Feb. 13, 2023, as Appl. No. 18/108,823.
Claims priority of application No. 10-2022-0050809 (KR), filed on Apr. 25, 2022.
Prior Publication US 2023/0343289 A1, Oct. 26, 2023
Int. Cl. G09G 3/3233 (2016.01); G06V 40/13 (2022.01); H10K 39/34 (2023.01); H10K 59/131 (2023.01)
CPC G09G 3/3233 (2013.01) [G06V 40/1318 (2022.01); H10K 39/34 (2023.02); H10K 59/131 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/08 (2013.01); G09G 2360/14 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A display device comprising: display pixels each including a light emitting part including a light emitting element and a pixel driver applying a driving current to the light emitting element; and light sensing pixels each including a light sensing part including an optical element and a sensing driver, the sensing driver applying a sensing current to a sensing line according to a photocurrent of the optical element, wherein the sensing driver comprises: a first sensing transistor controlling the sensing current flowing through the sensing line according to a voltage of a first electrode of the optical element; and a second sensing transistor initializing the first electrode of the optical element to a first level voltage, wherein a channel layer of the first sensing transistor and a channel layer of the second sensing transistor are made of different materials, the channel layer of the first sensing transistor is overlapped by a gate electrode of the first sensing transistor in plan view that controls an amount of the sensing current, and the channel layer of the second sensing transistor is overlapped by a gate electrode of the second sensing transistor in plan view.