US 12,293,087 B2
Apparatus and method for programming data in a non-volatile memory device
Hyung Jin Choi, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 18, 2022, as Appl. No. 17/989,857.
Claims priority of application No. 10-2022-0090175 (KR), filed on Jul. 21, 2022.
Prior Publication US 2024/0028216 A1, Jan. 25, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
plural memory cells, each of the plural memory cells capable of storing multi-bit data corresponding to an erase state and plural program states; and
control circuitry configured to divide plural program loops, which are performed to store the multi-bit data in the plural memory cells, into plural program groups and apply different program pulses, which correspond to each of the plural program groups, to the plural memory cells, wherein the control circuitry is configured to perform the plural program loops in one or more odd numbered program loops and one or more even numbered program loops.