| CPC G06F 3/04186 (2019.05) [G06F 3/04164 (2019.05); G06F 3/04166 (2019.05); G06F 3/044 (2013.01); G06F 2203/04107 (2013.01)] | 16 Claims |
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1. A touch structure, comprising:
a plurality of touch units in an array distribution;
a plurality of touch row selection lines, wherein one of the touch row selection lines is electrically connected to one row of the touch units; and
a plurality of touch column readout lines, wherein one of the touch column readout lines is electrically connected to one column of the touch units;
wherein each touch unit comprises: a first transistor, wherein a source electrode of the first transistor is configured to receive a corresponding electric drive signal; a touch metal block electrically connected to a gate electrode of the first transistor or a drain electrode of the first transistor; and a second transistor, wherein a source electrode of the second transistor is electrically connected to the drain electrode of the first transistor, a gate electrode of the second transistor is electrically connected to a corresponding one of the touch row selection lines, and a drain electrode of the second transistor is electrically connected to a corresponding one of the touch column readout lines; and
wherein the electric drive signal is a square wave touch drive signal, the touch metal block is electrically connected to the gate electrode of the first transistor, and the source electrode of the first transistor and the gate electrode of the first transistor at least partially overlap in a thickness direction of the touch structure to form a first parasitic capacitance; and the drain electrode of the first transistor and the first metal block at least partially overlap in the thickness direction of the touch structure to form a second parasitic capacitance, and the first metal block and the gate electrode of the first transistor are located in a same film layer.
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