US 12,292,695 B2
EUV wafer defect improvement and method of collecting nonconductive particles
Tao-Hsin Chen, Tainan (TW); Li-Jui Chen, Hsinchu (TW); and Chia-Yu Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/231,173.
Application 18/231,173 is a division of application No. 17/504,199, filed on Oct. 18, 2021, granted, now 12,032,303.
Application 17/504,199 is a continuation of application No. 17/037,558, filed on Sep. 29, 2020, granted, now 11,150,564, issued on Oct. 19, 2021.
Prior Publication US 2023/0375951 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70925 (2013.01) [G03F 7/70483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a wafer in a vacuum chamber, the method comprising:
moving a wafer stage in the vacuum chamber;
generating a particle from the wafer stage;
applying a voltage to particle removing electrodes provided at two sides of the wafer stage so as to sandwich the wafer stage, thereby removing the particle, wherein the particle removing electrodes extend from a measurement side of the wafer stage to an exposure side of the wafer stage; and
turning off a pump at the measurement side of the wafer stage to guide an exhaust flow to the exposure side of the wafer stage.