US 12,292,687 B2
Width adjustment of EUV radiation beam
Chi Yang, Hsinchu (TW); Tsung-Hsun Lee, Hsinchu (TW); Jian-Yuan Su, Hsinchu (TW); Ching-Juinn Huang, Hsinchu (TW); and Po-Chung Cheng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/226,160.
Application 18/226,160 is a continuation of application No. 17/549,682, filed on Dec. 13, 2021, granted, now 11,796,917.
Claims priority of provisional application 63/185,933, filed on May 7, 2021.
Prior Publication US 2023/0367221 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/2008 (2013.01) [G03F 7/70033 (2013.01); G03F 7/2004 (2013.01); H01L 21/0274 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A mirror system, comprising:
two or more facets attached to a support structure; and
an actuator attached to the two or more facets and configured to modify a width of a reflected extreme ultraviolet (EUV) radiation beam reflected from the two or more facets to a reticle that comprises a pattern area having a pattern area size based on the pattern area size to adjust a size of the reflected EUV radiation beam on the reticle to be the same as the pattern area size.