US 12,292,686 B2
Semiconductor structure and manufacturing method thereof
Yung-Yao Lee, Hsinchu County (TW); and Yi-Ping Hsieh, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Dec. 28, 2021, as Appl. No. 17/563,854.
Application 17/563,854 is a division of application No. 16/196,439, filed on Nov. 20, 2018, granted, now 11,226,562.
Claims priority of provisional application 62/734,037, filed on Sep. 20, 2018.
Prior Publication US 2022/0121121 A1, Apr. 21, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 1/22 (2012.01); G03F 1/60 (2012.01); G03F 1/76 (2012.01); H01L 21/027 (2006.01)
CPC G03F 7/2002 (2013.01) [G03F 1/22 (2013.01); G03F 1/60 (2013.01); G03F 1/76 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/2024 (2013.01); H01L 21/0274 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
providing a substrate;
disposing a first mask layer over the substrate;
disposing a first photoresist over the first mask layer;
patterning the first photoresist to form a plurality of first openings;
removing portions of the first mask layer exposed from the first photoresist to form a plurality of first recesses extended through the first mask layer;
removing the first photoresist;
disposing a second mask layer over the first mask layer;
disposing a second photoresist over the second mask layer;
patterning the second photoresist to form a plurality of second openings;
removing portions of the second mask layer exposed from the second photoresist to form a plurality of regions over the substrate; and
removing the second photoresist,
wherein each of the plurality of regions includes at least one of the plurality of first recesses, the first mask layer is at least partially transparent to a predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second photoresist is disposed between two of the plurality of second openings after the patterning of the second photoresist.