US 12,292,684 B2
Adhesion layer for multi-layer photoresist
Chen-Yu Liu, Kaohsiung (TW); Tzu-Yang Lin, Tainan (TW); Ya-Ching Chang, Hsinchu (TW); Ching-Yu Chang, Yilang County (TW); and Chin-Hsiang Lin, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 7, 2020, as Appl. No. 17/247,301.
Application 17/247,301 is a continuation of application No. 16/137,742, filed on Sep. 21, 2018, granted, now 10,859,915.
Prior Publication US 2021/0103218 A1, Apr. 8, 2021
Int. Cl. G03F 7/11 (2006.01); G03F 7/075 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC G03F 7/11 (2013.01) [G03F 7/0751 (2013.01); G03F 7/162 (2013.01); G03F 7/20 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/0276 (2013.01); H01L 29/1054 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a target layer over a first feature and a second feature disposed on a substrate, wherein the target layer has a planar upper surface;
depositing an antireflective coating (ARC) material on the planar upper surface of the target layer;
forming a first layer over the ARC material, wherein the first layer is a first composition of silicon (Si) and oxygen (O);
forming an adhesion layer over a top surface of the first layer, wherein the adhesion layer has a composition of a siloxane polymer with an epoxy group;
forming a photoresist layer on the adhesion layer interfacing the composition of the siloxane polymer with the epoxy group;
exposing a portion of the photoresist layer to a radiation source; and
cross-linking the adhesion layer and a component of the exposed portion of the photoresist layer, wherein the epoxy group provides the cross-linking between the adhesion layer and the component of the exposed portion of the photoresist layer.