US 12,292,661 B2
Electronic devices including transfer layer, methods of manufacturing the electronic devices, and electronic apparatuses including the electronic devices
Hongsuk Kim, Seoul (KR); Young Kim, Yongin-si (KR); and Hoon Song, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 22, 2022, as Appl. No. 17/892,752.
Claims priority of application No. 10-2022-0021734 (KR), filed on Feb. 18, 2022.
Prior Publication US 2023/0266627 A1, Aug. 24, 2023
Int. Cl. G02F 1/1347 (2006.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01)
CPC G02F 1/1347 (2013.01) [G02F 1/133528 (2013.01); G02F 1/1368 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a substrate having a thickness less than 0.7 mm, the substrate comprising at least one of a glass substrate and a silicon substrate;
a first transfer layer directly contacting a first surface of the substrate, the first transfer layer including an organic material;
a first stack provided on the first transfer layer;
a second transfer layer directly contacting a second surface of the substrate that is opposite to the first surface of the substrate; and
a second stack provided on the second transfer layer.