US 12,292,624 B2
Optoelectronic device and method of manufacturing an optoelectronic device
Guomin Yu, Glendora, CA (US)
Assigned to Rockley Photonics Limited, Altrincham (GB)
Appl. No. 17/640,994
Filed by ROCKLEY PHOTONICS LIMITED, Altrincham (GB)
PCT Filed Sep. 4, 2020, PCT No. PCT/EP2020/074791
§ 371(c)(1), (2) Date Mar. 7, 2022,
PCT Pub. No. WO2021/048018, PCT Pub. Date Mar. 18, 2021.
Claims priority of application No. 1912975 (GB), filed on Sep. 9, 2019.
Prior Publication US 2022/0342240 A1, Oct. 27, 2022
Int. Cl. G02F 1/025 (2006.01); G02F 1/225 (2006.01); H01L 31/0352 (2006.01)
CPC G02F 1/025 (2013.01) [G02F 1/2257 (2013.01); H01L 31/035281 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising:
a silicon-on-insulator wafer, comprising a substrate, a buried oxide (BOX) layer above the substrate, and a silicon device layer above the BOX layer;
an optical waveguide formed in the silicon device layer and including a semiconductor junction comprising:
a first doped region of semiconductor material; and
a second doped region of semiconductor material, the second doped region of semiconductor material containing dopants of a different species to the first doped region of semiconductor material, wherein:
a first portion of the first doped region of semiconductor material extends horizontally on top of the second doped region of semiconductor material and across the entire width of the waveguide, the first portion of the first doped region defining a top surface of the waveguide;
a second portion of the first doped region of semiconductor material extends vertically along a lateral side of the second doped region of semiconductor material;
a third portion of the first doped region of semiconductor material protrudes horizontally as a rounded salient from a mid-point of the second portion of the first doped region of semiconductor material into the second doped region of semiconductor material, the third portion of the first doped region having a hemi-cylindrical geometry and extending only to halfway across the width of the waveguide;
a first portion of the second doped region of semiconductor material immediately below the third portion of the first doped region extends vertically and continuously from the third portion of the first doped region to the BOX layer, the entire first portion of the second doped region being vertically between the third portion of the first doped region and the BOX layer, and no portion of the first doped region being vertically between the third portion of the first doped region and the BOX layer;
a second portion of the second doped region of semiconductor material immediately above the third portion of the first doped region extends vertically and continuously from the third portion of the first doped region to the first portion of the first doped region, the entire second portion of the second doped region being vertically between the third portion of the first doped region and the first portion of the first doped region; and
a third portion of the second doped region of semiconductor material comprises the entire portion of the second doped region that is immediately below the first portion of the first doped region and that is not overlapping with the third portion of the first doped region, the first portion of the second doped region, and the second portion of the second doped region, the third portion of the second doped region extending vertically and continuously from the first portion of the first doped region to the BOX layer.