US 12,292,608 B2
Gallium nitride (GaN) integrated circuit technology with optical communication
Han Wui Then, Portland, OR (US); Marko Radosavljevic, Portland, OR (US); Nicole K. Thomas, Portland, OR (US); Pratik Koirala, Portland, OR (US); Nityan Nair, Portland, OR (US); and Paul B. Fischer, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Sep. 15, 2021, as Appl. No. 17/476,310.
Prior Publication US 2023/0081460 A1, Mar. 16, 2023
Int. Cl. G02B 6/42 (2006.01); G06F 1/16 (2006.01)
CPC G02B 6/4274 (2013.01) [G06F 1/1686 (2013.01); G06F 1/1698 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit structure, comprising:
a layer or substrate having a first region and a second region, the layer or substrate comprising gallium and nitrogen;
a GaN-based device in or on the first region of the layer or substrate;
a CMOS-based device over the second region of the layer or substrate;
an interconnect structure over the GaN-based device and over the CMOS-based device, the interconnect structure comprising conductive interconnects and vias in a dielectric layer; and
a photonics waveguide over the interconnect structure, the photonics waveguide comprising silicon, and the photonics waveguide bonded to the dielectric layer of the interconnect structure.