US 12,292,486 B2
Method for measuring an external magnetic field by at least one magnetic memory point
Ricardo Sousa, Grenoble (FR); and Ioan-Lucian Prejbeanu, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
Appl. No. 18/042,697
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris (FR)
PCT Filed Aug. 24, 2021, PCT No. PCT/EP2021/073330
§ 371(c)(1), (2) Date Feb. 23, 2023,
PCT Pub. No. WO2022/043292, PCT Pub. Date Mar. 3, 2022.
Claims priority of application No. 2008638 (FR), filed on Aug. 24, 2020.
Prior Publication US 2023/0358826 A1, Nov. 9, 2023
Int. Cl. G01R 33/09 (2006.01); G01D 5/14 (2006.01); H10N 50/20 (2023.01)
CPC G01R 33/093 (2013.01) [G01D 5/14 (2013.01); G01R 33/098 (2013.01); H10N 50/20 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method for measuring an intensity of an external magnetic field by using at least one magnetic memory point comprising:
a storage layer having a magnetisation switchable between two magnetisation directions substantially perpendicular to the plane of the layer;
a reference layer having a fixed magnetisation perpendicular to the plane of the layer; and
a tunnel barrier layer separating the storage layer and the reference layer;
the method comprising:
a step of successively applying a plurality of currents or voltages of different amplitudes to said at least one memory point until switching of the magnetisation direction of the storage layer takes place to determine a minimum switching current value of the magnetisation direction of the storage layer or a minimum switching voltage value of the magnetisation direction of the storage layer, switching of the magnetisation direction of the storage layer being switching of the magnetisation direction of the storage layer from a configuration parallel to the magnetisation direction of the reference layer to a configuration antiparallel to the magnetisation direction of the reference layer or switching from a configuration antiparallel to the magnetisation direction of the reference layer to a configuration parallel to the magnetisation direction of the reference layer as a function of an initial magnetisation direction of the storage layer, and
a step of determining the intensity of the external magnetic field to be measured from the value of the minimum switching current or the value of the minimum switching voltage.