| CPC C30B 30/04 (2013.01) [C30B 15/20 (2013.01); C30B 29/06 (2013.01)] | 5 Claims |

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1. A method for growing a single-crystal silicon ingot, comprising:
during an initial stage of body growing process of the single-crystal silicon ingot, setting an initial height of a horizontal magnetic field to be higher than a free surface of silicon melt; and
during the body growing process of the single-crystal silicon ingot, controlling the horizontal magnetic field on convection intensity of the silicon melt to control oxygen concentration of the single-crystal silicon ingot to be decreased in an axial direction from a head portion to a tail portion;
wherein during the body growing process of the single-crystal silicon ingot, controlling the horizontal magnetic field on the convection intensity of the silicon melt to control oxygen concentration of the single-crystal silicon ingot to be decreased in an axial direction from a head portion to a tail portion, comprises: during the body growing process of the single-crystal silicon ingot, a height of the horizontal magnetic field being constant, increasing a magnetic field intensity of the horizontal magnetic field gradually to increase the control of the horizontal magnetic field on the convection intensity of the silicon melt, so as to control the oxygen concentration of the single-crystal silicon ingot to be decreased in the axial direction from the head portion to the tail portion; wherein an increasing frequency of the magnetic field intensity of the horizontal magnetic field ranges from 0.2 G/h to 0.6 G/h.
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