US 12,291,779 B2
Methods of selective atomic layer deposition
Bhaskar Jyoti Bhuyan, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); David Thompson, San Jose, CA (US); Tobin Kaufman-Osborn, Sunnyvale, CA (US); Kurt Fredrickson, Sunnyvale, CA (US); Thomas Knisley, Livonia, MI (US); and Liqi Wu, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 17, 2023, as Appl. No. 18/380,803.
Application 18/380,803 is a division of application No. 17/182,906, filed on Feb. 23, 2021, granted, now 11,821,085.
Application 17/182,906 is a division of application No. 16/382,643, filed on Apr. 12, 2019, abandoned.
Claims priority of provisional application 62/801,043, filed on Feb. 4, 2019.
Claims priority of provisional application 62/657,687, filed on Apr. 13, 2018.
Prior Publication US 2024/0052487 A1, Feb. 15, 2024
Int. Cl. C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/45527 (2013.01); H01L 21/02175 (2013.01); H01L 21/0228 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A selective deposition method comprising:
exposing a substrate having a first surface and a second surface to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface; and
sequentially exposing the substrate to a metal precursor and an oxygenating agent to selectively form a metal oxide layer on the second surface over the blocking layer or the first surface, the oxygenating agent comprising t-butanol and substantially no water, oxygen (O2), or ozone.