US 12,291,777 B2
Throughput improvement with interval conditioning purging
Chun-Hao Chen, Portland, OR (US); Jeremy David Fields, Portland, OR (US); and Frank Loren Pasquale, Tigard, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/309,211
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Nov. 27, 2019, PCT No. PCT/US2019/063479
§ 371(c)(1), (2) Date May 7, 2021,
PCT Pub. No. WO2020/112923, PCT Pub. Date Jun. 4, 2020.
Claims priority of provisional application 62/773,998, filed on Nov. 30, 2018.
Prior Publication US 2021/0395885 A1, Dec. 23, 2021
Int. Cl. C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/4408 (2013.01) [C23C 16/45557 (2013.01); C23C 16/505 (2013.01); H01J 37/32174 (2013.01); H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01J 37/32862 (2013.01); H01J 37/32935 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); H01J 2237/3321 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of processing deposition wafers in a processing apparatus, the method comprising:
conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber;
conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber before an accumulation baseline is reached; and
following the interval conditioning reaction chamber purge, conducting the deposition on another portion of the batch of deposition wafers in the reaction chamber,
wherein the conducting the interval conditioning reaction chamber purge is performed based on a total accumulation of deposited material during the first portion of the batch or based on a count of wafers processed in the reaction chamber in the first portion of the batch of wafers.