US 12,291,655 B2
Polishing composition and method of polishing a substrate having enhanced defect reduction
Yi Guo, Newark, DE (US)
Assigned to DuPont Electronic Materials Holding, Inc., Newark, DE (US)
Filed by Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US)
Filed on Apr. 27, 2021, as Appl. No. 17/241,399.
Prior Publication US 2022/0348788 A1, Nov. 3, 2022
Int. Cl. C09G 1/02 (2006.01); C09K 13/00 (2006.01); C09K 13/02 (2006.01); H01L 21/3105 (2006.01)
CPC C09G 1/02 (2013.01) [C09K 13/00 (2013.01); C09K 13/02 (2013.01); H01L 21/31053 (2013.01)] 4 Claims
 
1. A chemical mechanical polishing composition consisting of water; 10 to 20 wt % colloidal silica having a average particle size of 100 to 150 nm; optionally a pH adjusting agent; optionally a biocide; a pH of 10-12; and 0.1 to 0.5 wt % quaternary ammonium compound having formula (I):

OG Complex Work Unit Chemistry
wherein R1, R2 and R3 are independently selected from the group consisting of phenyl, benzyl, and linear or branched C1-C5 alkyl; and X− is an anion selected from the group consisting of Br−, Cl−, I−, F− and OH−.