CPC C01B 33/025 (2013.01) [B22F 9/04 (2013.01); C01B 33/02 (2013.01); C01B 33/021 (2013.01); C01B 33/023 (2013.01); C23F 1/44 (2013.01); H01M 4/386 (2013.01); B22F 2009/043 (2013.01); B82Y 30/00 (2013.01); C01P 2004/61 (2013.01); C01P 2006/16 (2013.01); C23F 1/00 (2013.01); Y02E 60/10 (2013.01)] | 8 Claims |
1. A method for manufacturing a silicon material comprising:
forming a composite comprising silicon, carbon, and at least one sacrificial material;
etching the composite to remove the at least one sacrificial material; and
washing the etched composite to remove byproducts formed during etching the composite;
wherein, after washing, the silicon material comprises between 1-5% carbon by mass, at least 80% silicon by mass, and a porosity between 10-50% by volume.
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