US 12,291,456 B2
High purity SiOC and SiC, methods compositions and applications
Douglas M. Dukes, Troy, NY (US); Ashish P. Diwanji, New Albany, NY (US); Andrew R. Hopkins, Sylvania, OH (US); Walter J. Sherwood, Glenville, NY (US); Mark S. Land, Houston, TX (US); Glenn Sandgren, Boston, MA (US); and Brian L. Benac, Hadley, NY (US)
Assigned to Pallidus, Inc., Albany, NY (US)
Filed by Palllidus, Inc., Albany, NY (US)
Filed on Jun. 19, 2022, as Appl. No. 17/844,041.
Application 17/844,041 is a continuation of application No. 16/825,162, filed on Mar. 20, 2020, granted, now 11,365,124.
Application 16/825,162 is a continuation of application No. 15/593,938, filed on May 12, 2017, granted, now 10,597,794, issued on Mar. 24, 2020.
Application 15/593,938 is a continuation of application No. 14/864,539, filed on Sep. 24, 2015, granted, now 9,657,409, issued on May 23, 2017.
Application 15/593,938 is a continuation of application No. 14/634,814, filed on Feb. 28, 2015, granted, now 10,167,366, issued on Jan. 1, 2019.
Application 15/593,938 is a continuation of application No. 14/268,150, filed on May 2, 2014, granted, now 9,815,943, issued on Nov. 14, 2017.
Application 15/593,938 is a continuation of application No. 14/212,896, filed on Mar. 14, 2014, granted, now 9,815,952, issued on Nov. 14, 2017.
Claims priority of provisional application 62/112,025, filed on Feb. 4, 2015.
Claims priority of provisional application 62/055,397, filed on Sep. 25, 2014.
Claims priority of provisional application 62/055,497, filed on Sep. 25, 2014.
Claims priority of provisional application 62/055,461, filed on Sep. 25, 2014.
Claims priority of provisional application 61/946,598, filed on Feb. 28, 2014.
Claims priority of provisional application 61/818,981, filed on May 3, 2013.
Claims priority of provisional application 61/818,906, filed on May 2, 2013.
Prior Publication US 2023/0090632 A1, Mar. 23, 2023
Int. Cl. C01B 32/956 (2017.01); C01B 32/977 (2017.01); C04B 35/56 (2006.01); C04B 35/571 (2006.01); C04B 35/80 (2006.01); C08G 77/20 (2006.01); C08G 77/50 (2006.01); C08L 83/00 (2006.01); C08L 83/04 (2006.01); C30B 23/00 (2006.01); C30B 23/02 (2006.01); C30B 29/06 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); C08G 77/00 (2006.01); C08G 77/12 (2006.01)
CPC C01B 32/956 (2017.08) [C01B 32/977 (2017.08); C04B 35/56 (2013.01); C04B 35/5603 (2013.01); C04B 35/571 (2013.01); C04B 35/80 (2013.01); C08G 77/20 (2013.01); C08G 77/50 (2013.01); C08L 83/00 (2013.01); C08L 83/04 (2013.01); C30B 23/00 (2013.01); C30B 23/025 (2013.01); C30B 29/06 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/66893 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/44 (2013.01); C04B 2235/48 (2013.01); C04B 2235/483 (2013.01); C04B 2235/528 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/96 (2013.01); C08G 77/12 (2013.01); C08G 77/80 (2013.01)] 7 Claims
 
1. An SiC wafer having a 4 H or a 6H polytype, for use as a semiconductor, the SiC wafer comprising a polymer derived SiC and a filler;
a. wherein the SiC wafer is made by steps comprising:
i. vapor deposition of a polymer derived SiC material to form a boule; the polymer derived SiC material consisting essentially of the polymer derived SiC and the filler and having a purity of at least 99.999%; and,
ii. preparing a wafer from the boule; and,
b. wherein the polymer derived SiC material is made by steps comprising:
i. curing of a liquid SiOC precursor formulation to form a cured SiOC solid material;
ii. pyrolizing the SiOC solid material to form the polymer derived SiC material.