US 12,291,447 B2
Apparatuses comprising films with free-standing region
Bjørn Mikladal, Helsinki (FI)
Assigned to CANATU OY, Vantaa (FI)
Appl. No. 16/762,708
Filed by Canatu Oy, Vantaa (FI)
PCT Filed Nov. 8, 2018, PCT No. PCT/FI2018/050822
§ 371(c)(1), (2) Date May 8, 2020,
PCT Pub. No. WO2019/092318, PCT Pub. Date May 16, 2019.
Claims priority of application No. 20176000 (FI), filed on Nov. 8, 2017.
Prior Publication US 2021/0171341 A1, Jun. 10, 2021
Int. Cl. B82B 3/00 (2006.01); B01D 63/08 (2006.01); B01D 67/00 (2006.01); B01D 69/06 (2006.01); B01D 69/10 (2006.01); B01D 71/02 (2006.01); B82Y 15/00 (2011.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); G03F 1/62 (2012.01); H01K 1/06 (2006.01); H01K 1/16 (2006.01); H01S 3/067 (2006.01); H01S 3/1115 (2023.01)
CPC B82B 3/0066 (2013.01) [B01D 63/08 (2013.01); B01D 63/081 (2013.01); B01D 67/0088 (2013.01); B01D 69/06 (2013.01); B01D 69/10 (2013.01); B01D 71/0212 (2022.08); G03F 1/62 (2013.01); B01D 2313/345 (2013.01); B82Y 15/00 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01K 1/06 (2013.01); H01K 1/16 (2013.01); H01S 3/067 (2013.01); H01S 3/1115 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a thin film comprising a network of conductive and/or semi-conductive high aspect ratio molecular structures (HARM-structures), wherein the thin film has a thickness between 1 nanometer and 10 micrometers,
a frame arranged to support the thin film in at least two support positions so that a freestanding region of the thin film extends between the at least two support positions, two or more electrical contact areas electrically coupled to the thin film,
wherein the two or more electrical contact areas are arranged and configured to pass electric charge across an entirety of the free-standing region of the thin film at a current between 0.01 and 10 amperes to provide magnetic attraction between the HARM-structures in the network, increasing tension and preventing sagging in the thin film.