US 12,290,874 B2
Laser annealing device
Dong Eon Lim, Cheonan-si (KR); Sung Yong Kang, Asan-si (KR); Youngsik Kim, Cheonan-si (KR); Jisoo Kim, Goyang-si (KR); and Hyunjin Kim, Ansan-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Mar. 5, 2020, as Appl. No. 16/810,152.
Claims priority of application No. 10-2019-0068022 (KR), filed on Jun. 10, 2019.
Prior Publication US 2020/0384570 A1, Dec. 10, 2020
Int. Cl. H01L 21/02 (2006.01); B23K 26/00 (2014.01); G02B 17/00 (2006.01); G02B 27/10 (2006.01); G02B 27/14 (2006.01)
CPC B23K 26/009 (2013.01) [G02B 27/106 (2013.01); G02B 27/144 (2013.01); G02B 27/145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A laser annealing device comprising:
a laser generator which emits a laser beam;
a beam splitter which splits the laser beam into a first reflective light and a transmissive light, wherein a polarization component of the transmissive light includes a P-polarization beam and an S-polarization beam;
a λ/2 phase difference member which changes a polarization component of the transmissive light from the beam splitter, wherein a relative position of the λ/2 phase difference member with respect to the beam splitter is fixed in a way such that the λ/2 phase difference member has a fixed angle with respect to the beam splitter;
a first reflective member which reflects the transmissive light having a changed polarization component by passing through the λ/2 phase difference member;
a second reflective member which reflects the transmissive light having the changed polarization component in a way such that the transmissive light having the changed polarization component, which is reflected from the first reflective member, is incident to the beam splitter; and
wherein a total output laser beam, which is generated by combining all output light that is directed from the beam splitter to a workpiece, is configured to have substantially equal proportions of P-polarization and S-polarization, and substantial uniformity of beam profile, in order that grains are formed substantially evenly during the laser annealing process.