US 12,290,835 B2
Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
Omid Zandi, Austin, TX (US); Jacques Faguet, Austin, TX (US); and Ornella Sathoud, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jul. 18, 2022, as Appl. No. 17/867,010.
Prior Publication US 2024/0017290 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B05D 1/00 (2006.01)
CPC B05D 1/60 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method to stabilize a self-assembled monolayer (SAM) structure, the method comprising:
providing a substrate having a target material and a non-target material exposed on a surface of the substrate;
forming a SAM structure on a surface of the target material;
exposing the surface of the substrate to a vapor-phase precursor, which selectively condenses on the SAM structure to form a condensate layer on the SAM structure; and
subsequently exposing the surface of the substrate to a vapor-phase initiator after the condensate layer is selectively formed on the SAM structure, wherein the vapor-phase initiator reacts with and polymerizes the condensate layer to form a polymer film on the SAM structure.