US 12,290,778 B2
Scrubber, ALD process system including the scrubber and method for fabricating semiconductor device using the scrubber
Seo Young Maeng, Seoul (KR); Il Jun Jeon, Hwaseong-si (KR); Su Ji Gim, Hwaseong-si (KR); Jin Hong Kim, Yongin-si (KR); Young Seok Roh, Suwon-si (KR); Jong Yong Bae, Hwaseong-si (KR); and Jung Joon Pyeon, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.; and CSK Inc.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and CSK Inc., Yongin-si (KR)
Filed on Nov. 28, 2021, as Appl. No. 17/536,048.
Claims priority of application No. 10-2020-0167460 (KR), filed on Dec. 3, 2020.
Prior Publication US 2022/0176301 A1, Jun. 9, 2022
Int. Cl. B01D 46/76 (2022.01); B01D 46/00 (2022.01); B01D 46/24 (2006.01); B01D 46/64 (2022.01); B01D 53/04 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC B01D 46/76 (2022.01) [B01D 46/0036 (2013.01); B01D 46/24 (2013.01); B01D 46/64 (2022.01); B01D 53/0407 (2013.01); C23C 16/34 (2013.01); C23C 16/4412 (2013.01); C23C 16/45544 (2013.01); H01L 21/02186 (2013.01); H01L 21/0228 (2013.01); B01D 2253/10 (2013.01); B01D 2279/51 (2013.01)] 20 Claims
OG exemplary drawing
 
5. A scrubber comprising:
a housing connected to a process chamber in which an ALD (atomic layer deposition) process is performed;
a filter unit which is disposed inside the housing, and includes a first filter and a second filter surrounding the first filter, which are configured to allow a process gas to pass through and filter a first powder from the process gas received from the process chamber;
a gas inlet which is connected to the housing, and is configured to receive the process gas from the process chamber and provide the process gas to the filter unit; and
a fin structure that extends in a vertical direction inside the first filter, and is configured to adsorb a second powder remaining in the process gas after passing through the first filter.