US 11,974,448 B2
Quantum dot light emitting diode, manufacturing method thereof and display panel with electron contribution layer for injecting free electrons to light emitting layer
Jingwen Feng, Beijing (CN); and Yichi Zhang, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on Aug. 27, 2021, as Appl. No. 17/458,782.
Claims priority of application No. 202011110885.2 (CN), filed on Oct. 16, 2020.
Prior Publication US 2022/0123248 A1, Apr. 21, 2022
Int. Cl. H10K 50/16 (2023.01); H10K 50/115 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/166 (2023.02) [H10K 50/115 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A quantum dot light emitting diode, comprising: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between an electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer;
wherein a material of the electron contribution layer comprises a metal material, and the electron contribution layer is configured to inject free electrons on a surface of the electron contribution layer into the quantum dot light emitting layer under action of an electric field between the first electrode and the second electrode.
 
2. The quantum dot light emitting diode of claim 1, wherein a work function of the metal material is less than 4 eV.