	US 11,973,160 B2
	Voltage tunable solar blindness in TFS grown EG/SiC Schottky contact bipolar phototransistors
Venkata Surya N. Chava, Columbia, SC (US); MVS Chandrashekhar, Columbia, SC (US); and Anusha Balachandran, Columbia, SC (US)
Assigned to University of South Carolina, Columbia, SC (US)
Filed by University of South Carolina, Columbia, SC (US)
Filed on Mar. 22, 2022, as Appl. No. 17/700,983.
Application 17/700,983 is a continuation of application No. 16/624,402, granted, now 11,309,449, previously published as PCT/US2018/039673, filed on Jun. 27, 2018.
Claims priority of provisional application 62/525,259, filed on Jun. 27, 2017.
Prior Publication US 2022/0216359 A1, Jul. 7, 2022
Int. Cl. H01L 31/11 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01)

CPC H01L 31/1105 (2013.01) [H01L 31/109 (2013.01); H01L 31/1816 (2013.01)]

19 Claims

10. A method of forming a voltage tunable solar-blind UV detector comprising:

forming a vertical bipolar transistor structure;

growing a p-SiC epilayer on an n⁺SiC substrate layer substrate via a CVD reactor;

growing an epitaxial graphene top electrode layer on the p-SiC epilayer by selective etching of

Si from SiC using a Tetrafluorosilane gas precursor;

vertically stacking the epitaxial graphene top electrode layer, intermediate p-SiC epilayer and the n⁺SiC substrate layer to form an:

epitaxial graphene/SiC heterojunction-based;

voltage tunable;

solar-blind UV detector; and

applying a bias voltage to the epitaxial graphene top electrode layer to shift a peak wavelength responsivity from 320 nm to less than 250 nm dependent upon the bias voltage applied.