US 11,973,140 B2
Driving system, driving method, computer system and non-transitory computer readable medium
Chiajen Wei, Jiaxing (CN); Leung Yu, Jiaxing (CN); and Shuqi Wei, Jiaxing (CN)
Assigned to HAINING ESWIN IC DESIGN CO., LTD., Jiaxing (CN); and BEIJING ESWIN COMPUTING TECHNOLOGY CO., LTD., Beijing (CN)
Filed by Haining ESWIN IC Design Co., Ltd., Jiaxing (CN); and Beijing ESWIN Computing Technology Co., Ltd., Beijing (CN)
Filed on Jan. 5, 2022, as Appl. No. 17/569,014.
Claims priority of application No. 202110772644.2 (CN), filed on Jul. 8, 2021.
Prior Publication US 2023/0009604 A1, Jan. 12, 2023
Int. Cl. H02M 1/00 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H02M 1/08 (2006.01); H03K 17/0812 (2006.01)
CPC H01L 29/7826 (2013.01) [H01L 29/786 (2013.01); H02M 1/08 (2013.01); H03K 17/08122 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A driving system for detecting an on-chip voltage to adjust a gate voltage of a thin film transistor, comprising: an input circuit, configured to receive an input on-chip voltage and to output the on-chip voltage; and an adjusting circuit, configured to detect a present amplitude of the on-chip voltage output by the input circuit and to output a bias voltage corresponding to the present amplitude of the on-chip voltage to a gate of the driven thin film transistor, wherein a source of the thin film transistor is directly or indirectly coupled to the on-chip voltage, and the bias voltage is lower than the on-chip voltage, wherein the adjusting circuit has a structure selected from a group including a first structure, a second structure and a third structure: the first structure comprises: a reference voltage generator, configured to output a plurality of reference voltages related to N selectable amplitudes of the on-chip voltage; a plurality of comparators, wherein each comparator is configured to compare the on-chip voltage output by the input circuit with a corresponding reference voltage and outputs comparison results; and a decision maker, configured to determine a mode related to the present amplitude of the on-chip voltage output by the input circuit detected from N modes related to the N selectable amplitudes of the on-chip voltage based on the comparison results of the plurality of comparators, and to output a bias voltage corresponding to the mode to the gate of the driven thin film transistor according to the determined mode, wherein N is a positive integer greater than 1, the second structure comprises: a V/I and I/V conversion circuit, configured to output a corresponding bias voltage based on the on-chip voltage output by the input circuit according to an input-output relationship between the on-chip voltage and the bias voltage, wherein the V/I and I/V conversion circuit comprise: a V/I conversion circuit, configured to convert the input on-chip voltage into a current signal; and a I/V conversion circuit, configured to convert the current signal into the corresponding bias voltage, and the third structure comprises: a plurality of resistors, configured to divide the input on-chin voltage to output a divided voltage.