US 11,973,138 B2
N-polar devices including a depleting layer with improved conductivity
Geetak Gupta, Goleta, CA (US); Umesh Mishra, Montecito, CA (US); Davide Bisi, Goleta, CA (US); Rakesh K. Lal, Isla Vista, CA (US); and David Michael Rhodes, Santa Barbara, CA (US)
Assigned to Transphorm Technology, Inc., Goleta, CA (US)
Filed by Transphorm Technology, Inc., Goleta, CA (US)
Filed on Jan. 28, 2022, as Appl. No. 17/588,119.
Application 17/588,119 is a continuation in part of application No. PCT/US2021/043060, filed on Jul. 23, 2021.
Claims priority of provisional application 63/061,356, filed on Aug. 5, 2020.
Prior Publication US 2022/0157981 A1, May 19, 2022
Int. Cl. H03K 17/68 (2006.01); H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H03K 17/687 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H03K 17/6871 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of operating a circuit comprising a depletion-mode transistor having a channel and an enhancement-mode transistor wherein a source of the depletion-mode transistor is connected to a drain of the enhancement-mode transistor, the method comprising:
biasing a gate of the depletion-mode transistor and a gate of the enhancement-mode transistor at zero volts and biasing a positive voltage to a drain of the depletion-mode transistor and blocking a current in a forward direction;
changing the bias of the gate of the enhancement-mode transistor to a first voltage greater than a threshold voltage of the enhancement-mode transistor while the gate of the depletion-mode transistor remains biased at zero volts such that a first current is allowed to flow through the channel in a forward direction; and
changing the bias of the gate of the depletion-mode transistor to a second voltage while the gate of the enhancement-mode transistor remains biased at the first voltage such that a second current is allowed to flow through the channel in a forward direction; wherein the second current is greater than the first current.