US 11,973,112 B2
Tiled lateral BJT
Vadim Kushner, Solana Beach, CA (US); and Nima Beikae, Laguna Niguel, CA (US)
Assigned to Silanna Asia Pte Ltd, Singapore (SG)
Filed by Silanna Asia Pte Ltd, Singapore (SG)
Filed on Nov. 29, 2022, as Appl. No. 18/059,742.
Application 18/059,742 is a continuation of application No. 17/072,777, filed on Oct. 16, 2020, granted, now 11,552,168.
Application 17/072,777 is a continuation of application No. 15/955,040, filed on Apr. 17, 2018, granted, now 10,811,497, issued on Oct. 20, 2020.
Prior Publication US 2023/0124961 A1, Apr. 20, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/0696 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01); H01L 29/408 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor tile formed within a horizontal length, a horizontal width, and a vertical thickness, the transistor tile comprising:
a first PLDD region formed as a first collector region located within a first portion of the transistor tile;
a second PLDD region formed as a second collector region located within a second portion of the transistor tile;
an N-well formed as a base region located within a central portion of the transistor tile between the first and second PLDD regions, wherein the central portion is horizontally between the first and second portions, and a direction of a flow of a base-collector current is horizontal between the first and second collector regions and the base region; and
an emitter P+ region formed as an emitter region located within the central portion of the transistor tile and in the N-well, wherein a direction of a flow of a collector-emitter current is horizontal between the first and second collector regions and the emitter region, and a direction of a flow of a base-emitter current is horizontal through the base region;
wherein the direction of the flow of the base-emitter current is perpendicular to the direction of the flows of the base-collector current and the collector-emitter current.