US 11,973,094 B2
Array substrate with light shielding, electronic device and manufacturing method of array substrate with light shielding
Tianmin Zhou, Beijing (CN); Rui Huang, Beijing (CN); Wei Yang, Beijing (CN); Lizhong Wang, Beijing (CN); Zhaohui Qiang, Beijing (CN); Tao Yang, Beijing (CN); and Li Qiang, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/290,495
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Sep. 23, 2020, PCT No. PCT/CN2020/117062
§ 371(c)(1), (2) Date Apr. 30, 2021,
PCT Pub. No. WO2021/068745, PCT Pub. Date Apr. 15, 2021.
Claims priority of application No. 201910961564.4 (CN), filed on Oct. 11, 2019.
Prior Publication US 2021/0408095 A1, Dec. 30, 2021
Int. Cl. H01L 27/146 (2006.01); G06V 40/13 (2022.01); H10K 59/12 (2023.01); H10K 59/65 (2023.01); H10K 71/00 (2023.01)
CPC H01L 27/14616 (2013.01) [G06V 40/1318 (2022.01); H01L 27/14603 (2013.01); H01L 27/14692 (2013.01); H10K 59/65 (2023.02); H10K 71/00 (2023.02); H10K 59/12 (2023.02); H10K 59/1201 (2023.02)] 18 Claims
OG exemplary drawing
 
1. An array substrate, comprising a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor;
wherein the first transistor is a low-temperature polysilicon transistor, and the second transistor is a metal oxide transistor; and
the array substrate further comprises a photodiode, the photodiode comprises a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode of the photodiode is electrically connected to a gate of the first transistor.