US 11,973,034 B2
Nanotwin copper materials in semiconductor devices
Eric J. Bergman, Kalispell, MT (US); John L. Klocke, Kalispell, MT (US); Marvin L. Bernt, Kalispell, MT (US); Jing Xu, Kalispell, MT (US); and Kwan Wook Roh, Kalispell, MT (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 25, 2021, as Appl. No. 17/411,321.
Prior Publication US 2023/0065426 A1, Mar. 2, 2023
Int. Cl. H01L 23/532 (2006.01); C25D 3/38 (2006.01); C25D 5/48 (2006.01); C25D 7/12 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/53238 (2013.01) [C25D 3/38 (2013.01); C25D 5/48 (2013.01); C25D 7/12 (2013.01); H01L 21/2885 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 23/53252 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electroplating method comprising:
plating a metal material into at least one opening on a patterned substrate, wherein at least a portion of the metal material is characterized by a nanotwin crystal structure; and
polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm, wherein the polished exposed surface comprises at least a portion of the metal material characterized by the nanotwin crystal structure.