US 11,972,944 B2
Method for depositing a gap-fill layer by plasma-assisted deposition
Timothee Julien Vincent Blanquart, Oud-Heverlee (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Oct. 21, 2022, as Appl. No. 17/971,265.
Application 17/971,265 is a division of application No. 16/962,841, granted, now 11,482,412, previously published as PCT/IB2019/000084, filed on Jan. 18, 2019.
Claims priority of provisional application 62/619,569, filed on Jan. 19, 2018.
Prior Publication US 2023/0065627 A1, Mar. 2, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02274 (2013.01) [C23C 16/045 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C23C 16/505 (2013.01); H01J 37/32146 (2013.01); H01J 37/32449 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/76224 (2013.01); H01L 21/76837 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3382 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for filling a patterned recess of a substrate by plasma-assisted deposition of a film having filling capability using a precursor in a reaction space, where a film without filling capability is depositable as a reference film on the substrate using the precursor in the reaction space when the precursor is supplied to the reaction space in a manner providing a first partial pressure of the precursor over the patterned recess of the substrate under first process conditions, said method comprising:
(i) supplying the precursor to the reaction space in a manner providing a second partial pressure of the precursor over the patterned recess of the substrate under second process conditions, wherein the second partial pressure is higher than the first partial pressure to the extent of providing filling capability to the film when being deposited under the second process conditions; and
(ii) exposing the patterned recess of the substrate to a plasma under the second process conditions to polymerize the precursor to thereby form the film having filling capability, wherein during the period of exposing the patterned recess of the substrate to the plasma, a partial pressure of the precursor is kept above the first partial pressure, thereby filling the recess in a bottom-up manner,
wherein whenever step (ii) is conducted, step (i) is conducted concurrently or as a preceding step, and
wherein the plasma is formed using argon and/or helium.