US 11,970,777 B2
Deposition of low-k films
Shuaidi Zhang, San Jose, CA (US); Ning Li, San Jose, CA (US); Mihaela A. Balseanu, Sunnyvale, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); and Thomas Knisley, Livonia, MI (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 24, 2022, as Appl. No. 17/848,600.
Application 17/848,600 is a continuation of application No. 16/950,096, filed on Nov. 17, 2020, granted, now 11,447,865.
Prior Publication US 2022/0325412 A1, Oct. 13, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/32 (2006.01); C01B 21/082 (2006.01); C01B 32/907 (2017.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/45553 (2013.01) [C01B 21/0828 (2013.01); C01B 32/907 (2017.08); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/45536 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing a film, the method comprising:
exposing a substrate in a processing chamber to a silicon precursor to deposit a silicon-containing film on the substrate, the silicon precursor having a structure of general formula (Id), (IX), or (X)

OG Complex Work Unit Chemistry
 wherein R1, and R2 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide;
purging the processing chamber of the silicon precursor;
exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, an alcohol, and a glyoxal; and
purging the processing chamber of the oxidant.