US 11,970,776 B2
Atomic layer deposition of metal films
Joshua Collins, Sunnyvale, CA (US); Griffin John Kennedy, San Leandro, CA (US); Hanna Bamnolker, Cupertino, CA (US); Patrick A. van Cleemput, San Jose, CA (US); and Seshasayee Varadarajan, Lake Oswego, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/310,293
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Jan. 27, 2020, PCT No. PCT/US2020/015241
§ 371(c)(1), (2) Date Jul. 27, 2021,
PCT Pub. No. WO2020/159882, PCT Pub. Date Aug. 6, 2020.
Claims priority of provisional application 62/797,860, filed on Jan. 28, 2019.
Prior Publication US 2022/0195598 A1, Jun. 23, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/08 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/08 (2013.01); C23C 16/308 (2013.01); C23C 16/34 (2013.01); C23C 16/45525 (2013.01); C23C 16/52 (2013.01); H01L 21/28568 (2013.01); H01L 21/02175 (2013.01); H01L 21/0228 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method comprising:
depositing a first layer from a first metal oxychloride precursor and ammonia using a first atomic layer deposition (ALD) process; and
depositing an elemental metal layer on the first layer from a second metal oxychloride precursor and hydrogen using a second ALD process, wherein the first layer is a metal oxynitride or metal nitride layer, and further comprising converting the first layer to a second elemental metal layer underlying the elemental metal layer.