US 12,290,011 B2
Multi-bit storage device using phase change material
Timothy Crockett, Raleigh, NC (US); and Lester Bartus, Jr., Wake Forest, NC (US)
Assigned to Toshiba Global Commerce Solutions, Inc., Durham, NC (US)
Filed by Toshiba Global Commerce Solutions, Inc., Durham, NC (US)
Filed on May 2, 2024, as Appl. No. 18/653,418.
Application 18/653,418 is a division of application No. 17/810,688, filed on Jul. 5, 2022, granted, now 12,004,433.
Prior Publication US 2024/0292764 A1, Aug. 29, 2024
Int. Cl. H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/826 (2023.02) [G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); H10B 63/20 (2023.02); H10N 70/231 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02); G11C 2013/009 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for programming a non-volatile multi-bit storage device, comprising:
heating a phase change material to a temperature that facilitates a transition to either a crystalline or an amorphous state;
during a cooling period, applying an electric field across the phase change material using a pair of electric field electrodes separated from the phase change material by a dielectric gap, wherein the phase change material includes n-type or p-type semiconductor impurities,
wherein application of the electric field induces a distribution of the semiconductor impurities within the phase change material to form a rectified current path.