US 12,290,010 B2
Method for manufacturing a conductive bridging memory device
Po-Tsun Liu, Hsinchu (TW); Chih-Chieh Hsu, Taoyuan (TW); and Kai-Jhih Gan, Kaohsiung (TW)
Assigned to National Yang Ming Chiao Tung University, Hsinchu (TW)
Filed by National Yang Ming Chiao Tung University, Hsinchu (TW)
Filed on Sep. 1, 2021, as Appl. No. 17/464,601.
Claims priority of application No. 110109341 (TW), filed on Mar. 16, 2021.
Prior Publication US 2022/0302386 A1, Sep. 22, 2022
Int. Cl. H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01)
CPC H10N 70/021 (2023.02) [G11C 13/0011 (2013.01); H10B 63/80 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method for manufacturing a conductive bridging memory device, comprising the steps of:
(a) forming a bottom electrode on a substrate;
(b) forming a switching layer on the bottom electrode, the switching layer including a surface region and an interior region each of which is made of a semiconducting metal oxide and free of gallium;
(c) after forming the switching layer, subjecting the surface region of the switching layer to an oxygen plasma surface treatment;
(d) forming a blocking layer on the treated surface region of the switching layer, the blocking layer including a conductive material; and
(e) forming an upper electrode on the blocking layer,
wherein before the oxygen plasma surface treatment, an amount of oxygen vacancies at the surface region is greater than an amount of oxygen vacancies at the interior region, and
wherein a difference between an amount of oxygen vacancies at the surface region and an amount of oxygen vacancies at the interior region after the oxygen plasma surface treatment is less than a difference between the amount of oxygen vacancies at the surface region and the amount of oxygen vacancies at the interior region before the oxygen plasma surface treatment.