| CPC H10N 60/207 (2023.02) [H03B 15/003 (2013.01); H03K 19/195 (2013.01); H03K 19/20 (2013.01); H10N 60/208 (2023.02); H10N 60/35 (2023.02); H10N 60/85 (2023.02)] | 22 Claims |

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1. A superconducting Meissner effect transistor comprising:
a superconducting bridge between a first and a second current probe, wherein the superconducting bridge is continuous between the first and second current probe without a Josephson junction, the first and second current probe being electrically connected to a source and a drain electrical connection and having a superconducting current between the source and drain electrical connection, respectively, and wherein the superconducting bridge is adapted to include a plurality of Cooper pairs;
a magnet, external to the superconducting bridge, emitting a magnetic field bias having a bias strength (Ha) at the superconducting bridge,
wherein, each Cooper pair includes a pair of electrons having anti-parallel spins when the superconducting bridge is subjected to the bias strength (Ha); and
a control line having a time varying magnetic field signal emitted therefrom, the magnetic field signal having a signal strength Hsig at the superconducting bridge sufficient, in combination with the bias strength Ha, to align each of the spins of the electrons in at least a portion of the Cooper pairs such that the portion of the Cooper pairs are broken,
wherein the magnetic field signal has a signal frequency less than the inverse of a relaxation time τ0 of the superconducting bridge and the superconducting current is modulated at the signal frequency.
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