| CPC H10N 60/12 (2023.02) [G06N 10/40 (2022.01); H10N 60/805 (2023.02)] | 20 Claims |
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1. A device, comprising:
a first group of quantum circuit elements on a first crystalline surface of a crystalline dielectric layer;
a second group of quantum circuit elements on a second crystalline surface of the crystalline dielectric layer, wherein the first group of quantum circuit elements is coupled to the second group of quantum circuit elements;
a capacitor, wherein the first group of quantum circuit elements comprises a first plate of the capacitor, wherein the second group of quantum circuit elements comprises a second plate of the capacitor, wherein the crystalline dielectric layer is situated between the first plate and the second plate, wherein the first crystalline surface interfaces with the first plate, wherein the second crystalline surface interfaces with the second plate, and wherein the first plate is coupled to the second plate;
a qubit, comprising:
a Josephson junction, and
a shunt capacitor associated with the Josephson junction;
a resonator, comprising:
the capacitor, wherein the capacitor is associated with the qubit via a capacitive coupler component, and
an inductor that is associated with the capacitor; and
microstrip signal lines associated with the capacitor, wherein at least one of the Josephson junction, the capacitor, the shunt capacitor, the inductor, or the microstrip signal lines is comprised of a superconducting material, and wherein quantum circuit elements of the first group of quantum circuit elements or the second group of quantum circuit elements are part of at least one of the qubit, the Josephson junction, the shunt capacitor, the capacitor, the inductor, or the microstrip signal lines.
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