US 12,290,007 B2
Magnetic memory device and method of operating the same
Siyeon Cho, Hwaseong-si (KR); Taeyoung Kim, Seoul (KR); Hyunmog Park, Seoul (KR); Bongyong Lee, Suwon-si (KR); and Yukio Hayakawa, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 14, 2022, as Appl. No. 17/966,183.
Claims priority of application No. 10-2022-0031008 (KR), filed on Mar. 11, 2022.
Prior Publication US 2023/0292630 A1, Sep. 14, 2023
Int. Cl. G11C 11/15 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC H10N 52/80 (2023.02) [G11C 11/161 (2013.01); G11C 11/18 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a magnetic track having a loop shape, the magnetic track including a first part and a second part that are arranged in a counterclockwise direction;
a first conductive line on a top surface of the first part; and
a second conductive line on a bottom surface of the second part,
wherein the magnetic track includes a lower magnetic layer, a spacer layer, and an upper magnetic layer that are sequentially stacked,
wherein each of the first conductive line and the second conductive line includes a heavy metal, each of the first conductive line and the second conductive line being configured to generate spin-orbit torque caused by current that flows therein, and
wherein magnetic domains in the magnetic track are configured to move in a clockwise direction or in the counterclockwise direction by the spin-orbit torque.