US 12,290,006 B2
Semiconductor device with integrated magnetic flux concentrator, and method for producing same
Appo Van Der Wiel, Tessenderlo (BE); Yves Bidaux, Bevaix (CH); and Lionel Tombez, Bevaix (CH)
Assigned to MELEXIS TECHNOLOGIES SA, Bevaix (CH)
Filed by Melexis Technologies SA, Bevaix (BE)
Filed on Sep. 6, 2023, as Appl. No. 18/461,923.
Application 18/461,923 is a continuation of application No. 17/519,809, filed on Nov. 5, 2021, granted, now 11,785,865.
Claims priority of application No. 20209345 (EP), filed on Nov. 23, 2020.
Prior Publication US 2023/0422632 A1, Dec. 28, 2023
Int. Cl. G01R 33/07 (2006.01); H10N 50/80 (2023.01); H10N 52/00 (2023.01)
CPC H10N 52/101 (2023.02) [G01R 33/072 (2013.01); H10N 50/80 (2023.02)] 35 Claims
OG exemplary drawing
 
1. An integrated semiconductor substrate comprising:
a top layer or an upper surface;
an integrated magnetic flux concentrator comprising at least one layer comprising a soft magnetic material;
wherein the integrated magnetic flux concentrator extends at least partially inside said top layer and/or below said upper surface;
wherein the integrated semiconductor substrate further comprises an interconnection stack comprising at least three or at least four metal layers; and
wherein the integrated magnetic flux concentrator extends at least partially into the interconnection stack.