US 12,290,004 B2
Semiconductor device
Chih-Wei Kuo, Tainan (TW); and Chia-Chang Hsu, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 26, 2024, as Appl. No. 18/674,889.
Application 18/674,889 is a continuation of application No. 18/201,741, filed on May 24, 2023, granted, now 12,029,138.
Application 18/201,741 is a continuation of application No. 17/165,837, filed on Feb. 2, 2021, granted, now 11,706,995, issued on Jul. 18, 2023.
Claims priority of application No. 202110011336.8 (CN), filed on Jan. 6, 2021.
Prior Publication US 2024/0315146 A1, Sep. 19, 2024
Int. Cl. H10N 50/80 (2023.01); H01L 27/02 (2006.01); H10B 61/00 (2023.01)
CPC H10N 50/80 (2023.02) [H01L 27/0248 (2013.01); H10B 61/22 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having an array region defined thereon;
magnetic tunneling junction (MTJ) patterns on the array region, wherein the MTJ patterns are arranged in an array;
a ring of dummy pattern surrounding the array region, wherein the ring of dummy pattern comprises:
a ring of MTJ pattern surrounding the array region, wherein the ring of MTJ pattern is made of a single MTJ; and
a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.