US 12,290,002 B2
Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element
Yugo Ishitani, Tokyo (JP); Tomoyuki Sasaki, Tokyo (JP); and Yohei Shiokawa, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Aug. 11, 2023, as Appl. No. 18/232,941.
Application 18/232,941 is a division of application No. 17/104,931, filed on Nov. 25, 2020, granted, now 11,770,978.
Claims priority of application No. 2019-212835 (JP), filed on Nov. 26, 2019; and application No. 2020-173445 (JP), filed on Oct. 14, 2020.
Prior Publication US 2023/0389442 A1, Nov. 30, 2023
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetization rotational element comprising:
a spin-orbit torque wiring; and
a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and configured for spins to be injected from the spin-orbit torque wiring,
wherein the spin-orbit torque wiring has a plurality of spin generation layers and at least one insertion layer located between the plurality of spin generation layers in the first direction,
the insertion layer has a lower electrical resistivity than the spin generation layers, and
the spin generation layers include an element selected from the group consisting of Mo, Ru, Rh, Pd, Ta, W, Ir, Pt, Au, and Bi.