US 12,289,939 B2
Display device
Sang Hoon Pak, Seoul (KR); Tae Gyu Lee, Paju-si (KR); Seon Hee Lee, Seoul (KR); Jung Eun Lee, Seoul (KR); and Kyung Ha Lee, Seoul (KR)
Assigned to LG Display Co., Ltd., (KR)
Filed by LG DISPLAY CO., LTD., Seoul (KR)
Filed on Nov. 29, 2021, as Appl. No. 17/536,142.
Claims priority of application No. 10-2020-0163837 (KR), filed on Nov. 30, 2020.
Prior Publication US 2022/0173160 A1, Jun. 2, 2022
Int. Cl. H10H 29/14 (2025.01); H10D 30/67 (2025.01); H10H 20/821 (2025.01); H10H 20/831 (2025.01); H10H 20/84 (2025.01); H10H 20/851 (2025.01); H10H 20/855 (2025.01)
CPC H10H 29/142 (2025.01) [H10D 30/6723 (2025.01); H10H 20/821 (2025.01); H10H 20/831 (2025.01); H10H 20/84 (2025.01); H10H 20/8515 (2025.01); H10H 20/855 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A display device comprising:
first and second alignment electrodes disposed on a substrate;
an alignment insulating film having a concave portion disposed between the first and second alignment electrodes;
a light-emitting device disposed on the alignment insulating film;
first and second electrodes electrically connected to the light-emitting device;
a thin-film transistor electrically connected to one of the first and second electrodes; and
a plurality of insulating films having a trench disposed on the concave portion,
wherein the trench has a larger width than the concave portion,
wherein the first alignment electrode and the second alignment electrode are formed so as to protrude in a finger shape, and have an interdigitated or overlapping comb structure,
wherein the alignment insulating film includes a protective film disposed on the thin-film transistor,
wherein the plurality of insulating films includes:
a buffer layer disposed under an active layer of the thin-film transistor;
a gate insulating film disposed between the active layer of the thin-film transistor and a gate electrode of the thin-film transistor; and
an interlayer insulating film disposed between source and drain electrodes of the thin-film transistor and the gate electrode of the thin-film transistor,
wherein the trench exposes side surfaces of the buffer layer, the gate insulating film, and the interlayer insulating film and an upper surface of the substrate, and
wherein the concave portion is defined by a curved surface of the protective film corresponding to a space between the first and second alignment electrodes.