US 12,289,934 B2
Display device using micro LED, and method for manufacturing same
Hwanjoon Choi, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/619,162
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Jun. 21, 2019, PCT No. PCT/KR2019/007526
§ 371(c)(1), (2) Date Dec. 14, 2021,
PCT Pub. No. WO2020/256191, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 10-2019-0074020 (KR), filed on Jun. 21, 2019.
Prior Publication US 2022/0336712 A1, Oct. 20, 2022
Int. Cl. H01L 33/44 (2010.01); H01L 25/075 (2006.01); H10H 20/82 (2025.01); H10H 20/84 (2025.01); H01L 23/00 (2006.01); H10H 20/01 (2025.01); H10H 20/80 (2025.01)
CPC H10H 20/84 (2025.01) [H01L 25/0753 (2013.01); H10H 20/82 (2025.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/95 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83851 (2013.01); H01L 2224/951 (2013.01); H10H 20/01335 (2025.01); H10H 20/034 (2025.01); H10H 20/882 (2025.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor light emitting element for a display device, the semiconductor light emitting element comprising:
a semiconductor light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; and
a light extraction structure disposed on top of the second conductivity type semiconductor layer of the semiconductor light emitting structure,
wherein the light extraction structure includes:
a plurality of organic protrusions protruding in a vertical direction of the second conductivity type semiconductor layer; and
a surface roughness pattern formed on at least a portion of a top surface of the second conductivity type semiconductor layer,
wherein at least one of the plurality of organic protrusions contains nanoparticles positioned at an end of the at least one of the plurality of organic protrusions and an organic component supporting the nanoparticles, and
wherein the organic component is a photosensitive organic component.