US 12,289,927 B2
Image sensor diagonal isolation structures
Duli Mao, Sunnyvale, CA (US); Qin Wang, San Jose, CA (US); Bill Phan, San Jose, CA (US); Shiyu Sun, Cupertino, CA (US); and Hui Zang, San Jose, CA (US)
Assigned to Omni Vision Technologies, Inc., Santa Clara, CA (US)
Filed by OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed on Mar. 25, 2022, as Appl. No. 17/705,133.
Prior Publication US 2023/0307478 A1, Sep. 28, 2023
Int. Cl. H10F 39/00 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/8067 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a source of electromagnetic radiation disposed in a peripheral region on a substrate;
a pixel array disposed in an active pixel region on the substrate and thermally coupled with the source of electromagnetic radiation; and
an isolation structure disposed in the peripheral region on the substrate between the source of electromagnetic radiation and the pixel array, the isolation structure defining a first reflective surface oriented on a first bias relative to a lateral axis of the pixel array and a second reflective surface oriented on a second bias relative to the lateral axis,
wherein the isolation structure is configured to attenuate residual electromagnetic radiation reaching a proximal region of the pixel array by pairing a first reflection and a second reflection of the electromagnetic radiation by the first reflective surface and the second reflective surface, and wherein the isolation structure comprises an array of diagonal isolation structures comprising a first subset of diagonal isolation structures and a second subset of diagonal isolation structures.