US 12,289,919 B1
Buffered top thin film resistor, MIM capacitor, and method of forming the same
Venkata Mangathayaru Bollam, Singapore (SG); Qiying Wong, Singapore (SG); and Yudi Setiawan, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed by GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed on Apr. 17, 2024, as Appl. No. 18/637,915.
Int. Cl. H10D 84/00 (2025.01); H01L 23/48 (2006.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01)
CPC H10D 84/206 (2025.01) [H01L 23/481 (2013.01); H10D 1/474 (2025.01); H10D 1/711 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a dielectric layer over a back end of line (BEOL) metal layer;
a metallic resistive layer over the dielectric layer;
a resistor comprising a metallic resistive film that is a first portion of the metallic resistive layer; and
a metal-insulator-metal (MIM) capacitor comprising a top plate, a bottom plate, and an insulator between the top plate and the bottom plate, wherein the insulator of the MIM capacitor comprises at least two layers including a first layer that is a second portion of the metallic resistive layer and a second layer that is the dielectric layer, and wherein the metallic resistive layer comprises a metallic dielectric film.